High-resolution depth profiling and crystallography
Due to the ongoing miniaturization as well as the increasing use of single crystalline materials in electronics we have set up a Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) system in order to perform depth profiling and crystallographic studies for samples which are far too thin to be profiled by conventional ion-beam based analysis.
By this method we are able to obtain information on film composition, homogeneity and crystallography down to 1 nm in thickness. As we employ extremely low beam doses, the investigations are virtually non-destructive.
This method has a not yet fully explored potential in future development of electronics and sensors.
P. Ström, P. Petersson, M. Rubel, D. Primetzhofer, S. Brezinsek et al.
Ion beam analysis of tungsten layers in EUROFER model systems and carbon plasma facing components
Nucl. Instr. and Meth. B 371 (2016) 355 doi: 10.1016/j.nimb.2015.09.024
Linnarsson, M., Hallén, A., Åström, J., Primetzhofer, D. et al.
New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector
Review of Scientific Instruments 83 (2012) 095107 doi: 10.1063/1.4750195